PDTC114TT,215 datasheet

Маркировка

PDTC114TT,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PDTC114TT,215 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V ID_COMPONENTS: 1947830 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Peak Dc Collector Current: 100 mA Power - Max: 250mW Resistor - Base (r1) (ohms): 10K Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 10 KOhm Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 3000 Part # Aliases: PDTC114TT T/R Other Names: 934034900215, PDTC114TT T/R
Количество страниц

11 шт.
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75,38 KB